Impurity Measurments in Polycrystallline Material with Atom Probe Tomography

Atom probe tomography in nanoelectronics

The role of laser assisted atom probe tomography (APT) in microelectronics is discussed on the basis of various illustrations related to SiGe epitaxial layers, bipolar transistors or MOS nano-devices including gate all around (GAA) devices that were carried out at the Groupe de Physique des Matériaux of Rouen (France). 3D maps as provided by APT reveal the atomic-scale distribution of dopants a...

Dopant measurements in semiconductors with atom probe tomography

The capability of atom probe tomography to make useful measurements of dopant distribution single device geometry is explored by characterizing the compositional accuracy of reconstructed data sets. The objective of this analysis is to evaluate whether atom probe can provide measurements to guide a predictive model development for diffusion in device geometry and strain conditions. Simple measu...

Atom Probe Tomography Analysis of Ag Doping in 2D Layered Material (PbSe)5(Bi2Se3)3.

Impurity doping in two-dimensional (2D) materials can provide a route to tuning electronic properties, so it is important to be able to determine the distribution of dopant atoms within and between layers. Here we report the tomographic mapping of dopants in layered 2D materials with atomic sensitivity and subnanometer spatial resolution using atom probe tomography (APT). APT analysis shows tha...

Toward atom probe tomography of microelectronic devices

Atom Probe Tomography of Oxide Scales

Atom probe tomography, APT, is the only microstructural method that can routinely analyse and position individual atoms in a material with a spatial resolution of 0.1-0.5 nm. Recent implementation of pulsed-laser to APT made investigation of less conducting materials, such as oxides, feasible. In this paper a short description of the principle of the techniques is presented. It is followed by e...